This document describes the TPC8014 model of TOSHIBA Field Effect Transistor (U-MOS III), which is suitable for lithium-ion battery applications, portable equipment applications, and notebook PC applications. It features a small and thin package, low drain-source ON resistance, high forward transfer admittance, and low leakage current.
This document is a technical datasheet for the Toshiba TPC8014, an N-channel silicon MOSFET (U-MOS III). It is designed for applications such as lithium-ion battery management, portable equipment, and notebook PCs. The device features a small footprint package with low drain-source ON resistance of 11 mΩ typical.
| Gate threshold voltage (Vth) | 1.3 to 2.5 V |
|---|---|
| Drain-source ON resistance (Rdson) | 11 mΩ (typ.) |
| Forward transfer admittance (|Yfs|) | 10 S (typ.) |
| Drain power dissipation (t=10s) | 1.9 W |
| Channel temperature (Tch) | 150 °C |
The TPC8014 is designed for lithium ion battery, portable equipment, and notebook PC applications.
The channel temperature must not exceed 150°C.