The TPC8016-H is a high performance N-channel MOS switch from Toshiba. Its features include a small footprint, high switching speed, small gate charge, low on-resistance, high forward transfer gain, and low leakage current. This switch is suitable for applications such as notebook computers and portable devices.
This document is a technical datasheet for the Toshiba TPC8016-H, an N-channel silicon MOS transistor. It is specifically designed for use in notebook PCs and portable equipment as part of high-speed and high-efficiency DC-DC converters.
The device features a small footprint due to its thin package and offers low drain-source ON resistance (3.7 mΩ typical) and low gate charge (48 nC typical). Key specifications include a maximum drain-source voltage of 30V, a maximum pulsed drain current of 60A, and an operating channel temperature range up to 150°C.
| Drain-Source Voltage | 30 V |
|---|---|
| Gate Threshold Voltage | 1.1 to 2.3 V |
| Drain-Source ON Resistance | 3.7 mΩ (typ.) |
| Gate Charge | 48 nC (typ.) |
| Thermal Resistance (Channel to Ambient) | 65.8 °C/W |
The maximum drain-source voltage is rated at 30 V.
A single pulse of 10 seconds allows for 19 W of drain power dissipation.
The total gate charge is typically 48 nC under these conditions.