The TPC8104-H is a high-performance field effect transistor produced by Toshiba. It is mainly used in lithium-ion batteries and notebook computers. The transistor has the advantages of small size, high frequency switching, low gate charge, low on-resistance, high forward transfer admittance and low leakage current.
This document is a technical datasheet for the TOSHIBA TPC8104-H, a silicon P-channel MOS type field effect transistor. It is specifically optimized for high-speed and high-efficiency DC-DC converters in lithium-ion battery applications, such as notebook PCs and portable equipment.
The device features a small footprint due to its thin package, with typical gate charge (Qg) of 17nC and low drain-source ON resistance (RDS(ON)) of 38mΩ. Key specifications include a maximum drain-source voltage of -30V and a channel temperature limit of 150°C.
| Gate threshold voltage (Vth) | -0.8 to -2.0 V |
|---|---|
| Drain-source ON resistance (RDS(ON)) | 38 mΩ (typ.) |
| Channel temperature limit | 150 °C |
The device is designed for high-speed and high-efficiency DC-DC converters, lithium ion battery applications, notebook PCs, and portable equipment.
The maximum rated drain-source voltage is -30 V.