The TPC8102 is a P-channel MOSFET from Toshiba. It is characterized by its small size, low power consumption, and low leakage current. It is suitable for applications such as notebook PCs and portable equipment.
This document is a technical datasheet for the Toshiba TPC8102, an enhancement-mode Field Effect Transistor (FET) utilizing t-MOSVI technology. It is specifically designed for Lithium Ion Battery Applications in Notebook PCs and Portable Equipment.
The device features a small footprint due to its thin package design and offers low drain-source ON resistance of 34 mΩ typical. Key electrical characteristics include a gate threshold voltage range of -0.8V to -2.0V, a maximum leakage current of -10 pA at Vgs = -30V, and a forward transfer admittance of 9 S typical.
| Product Type | Silicon P Channel MOS Type (t-MOSVI) |
|---|---|
| Typical Drain-Source ON Resistance | 34 mΩ |
| Typical Forward Transfer Admittance | 9 S |
| Maximum Gate Leakage Current | -10 pA |
| Gate Threshold Voltage Range | -0.8 ~ -2.0 V |
| Drain-Source Breakdown Voltage | -30 V |
| Typical Weight | 0.080 g |
The device is designed for lithium ion battery applications in notebook PCs, portable equipment, and small footprint units.
The transistor can handle a pulse drain current of up to 24 A under specified conditions.
The device has a typical drain-source ON resistance of 34 mQ.