This document is a data sheet from ROHM Co., Ltd., introducing the features and applications of the 4V drive N-channel MOSFET RSD150N06. The product has features such as low on-resistance, fast switching speed, simple drive circuits, and easy parallel use.
The ROHM RSD150N06 is a 4 V‑drive N‑channel MOSFET offering low on‑resistance, fast switching, and easy parallel use. It is intended for general‑purpose electronic equipment such as audio‑visual, office‑automation, communication devices, and consumer electronics.
The document provides detailed electrical characteristics, absolute maximum ratings, thermal resistance, packaging information, and measurement circuit diagrams, along with legal notices and application guidance.
| Drain‑source voltage (VDS) | 60 V |
|---|---|
| Gate‑source voltage (VGS) | 20 V |
| Continuous drain current (ID) | 15 A |
| Pulsed drain current (ID(pulse)) | 30 A |
| Power dissipation (PD) | 20 W |
| On‑state resistance (RDS(on)) typical | 33 mΩ |
| Thermal resistance (RθJC) | 6.25 °C/W |
The maximum drain‑source voltage is 60 V.
It can handle a continuous drain current of 15 A.
The typical on‑state resistance is about 33 mΩ.
The thermal resistance is 6.25 °C/W.