This document describes the features and characteristics of the 4V Drive Pch MOSFET RSD140P06 produced by ROHM Co., Ltd. These features include low on-resistance, fast switching speed, simple drive circuits, and easy parallel use. The product is suitable for switching applications.
The RSD140P06 is a 4 V drive P‑channel MOSFET from ROHM. It offers low on‑resistance, fast switching speed, and easy parallel use, making it suitable for a variety of switching applications.
The datasheet lists absolute maximum ratings, thermal resistance, detailed electrical characteristics, characteristic curves, and measurement circuit diagrams. It also includes packaging details and a notice about usage and liability.
| Drain‑source voltage (VDS) | -60 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | +14 A |
| Pulsed drain current (ID(pulse)) | +28 A |
| Power dissipation (PD) | 20 W |
| Maximum junction temperature (TJ) | 150 °C |
| Storage temperature range | -55 to +150 °C |
| Thermal resistance (RθJC) | 6.25 °C/W |
The RSD140P06 is rated for a drain‑source voltage of -60 V.
The device can handle a continuous drain current of +14 A.
It can dissipate up to 20 W under the specified conditions.