The RRQ030P03 is a 4V drive Pch MOSFET from ROHM. It features low on-resistance, high power package and high switching speed.
The RRQ030P03 is a 4 V drive P‑channel MOSFET offered in a TSMT6 package. It features low on‑resistance, a high‑power package, and fast switching speed, making it suitable for a variety of electronic applications.
The datasheet lists absolute maximum ratings, thermal resistance, and detailed electrical characteristics such as drain‑source voltage, gate‑source voltage, and typical capacitances. It also includes application circuits, measurement methods, and packaging information to aid designers in integrating the device into their products.
| Drain‑source voltage (VDS) | -30 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Total power dissipation (PD) | 1.25 W |
| Channel temperature limit (TCH) | 150 °C |
| Package type | TSMT6 |
The device can tolerate a drain‑source voltage of up to -30 V.
The MOSFET is supplied in a TSMT6 surface‑mount package.
The typical total gate charge is 5.2 nC.
The device can dissipate up to 1.25 W under the specified conditions.