This document introduces the RRQ045P03 Pch MOSFET product produced by ROHM Co. Ltd. The product features low on-resistance, high power package, and high-speed switching, making it suitable for switching applications.
The RRQ045P03 is a 4 V drive P‑channel MOSFET offered by ROHM. It features low on‑resistance, a high‑power package, and fast switching suitable for a variety of switching applications.
The datasheet lists the device's absolute maximum ratings, electrical characteristics, and typical performance curves. Packaging is supplied in a tape‑and‑reel format (Type Code TR) with a basic ordering unit of 3000 pieces, and the component is rated for a channel temperature of up to 150 °C.
| Drain‑source voltage (VDS) | -30 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 44.5 A |
| Total power dissipation (PD) | 1.25 W |
| Channel temperature (TCH) | 150 °C |
The device can withstand a drain‑source voltage of up to -30 V.
The MOSFET is supplied in a tape‑and‑reel package with Type Code TR and a basic ordering unit of 3000 pieces.
The component can be stored from –55 °C to +150 °C.