The RRR030P03 is a silicon P‑channel MOSFET designed for 4 V drive applications. It features a low on‑resistance, a small TSMT3 surface‑mount package, and can handle high drain currents.
Typical electrical specifications include a drain‑source voltage of –30 V, gate‑source voltage of +20 V, continuous drain current of 43 A, and a maximum power dissipation of 1 W. The device is intended for switching applications and is supplied in a TSMT3 package.
| Drain‑source voltage (VDS) | -30 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 43 A |
| Pulsed drain current (ID, pulse) | 12 A |
| Continuous source current (IS) | 0.8 A |
| Total power dissipation (PD) | 1.0 W |
| Maximum junction temperature (TJ) | 150 °C |
| Storage temperature range | -55 to +150 °C |
| Typical on‑resistance (RDS(on)) | 85 mΩ |
The maximum drain‑source voltage is –30 V.
It is supplied in a TSMT3 surface‑mount package.
Typical on‑resistance is about 85 mΩ.
The device can handle a continuous drain current of 43 A.