4V Drive Pch MOSFET RRL035P03 is a P-channel MOSFET product produced by ROHM company. It has low on-resistance and high switching speed, which is suitable for switching applications.
This datasheet describes the ROHM RRLO35P03 4 V drive P‑channel MOSFET, including its structure, key features such as low on‑resistance and high‑speed switching, and typical application areas. Packaging information, dimensions, and ordering details are also provided.
Electrical specifications cover absolute maximum ratings, thermal resistance, and detailed characteristic curves for drain‑source voltage, gate‑source voltage, on‑state resistance, capacitances, and switching times. Measurement circuit diagrams and a legal notice conclude the document.
| Drain‑source voltage (Vdss) | -30 V |
|---|---|
| Gate‑source voltage (Vgss) | +20 V |
| Continuous drain current (Id) | 43.5 A |
| Pulsed drain current (Id,pulse) | +14 A |
| Power dissipation (Pd) | 4 W |
| Thermal resistance, channel‑to‑ambient (RθJA) | 125 °C/W |
The RRLO35P03 can withstand a drain‑source voltage of -30 V.
The device is rated for a gate‑source voltage of +20 V.
It can conduct a continuous drain current of 43.5 A.
The MOSFET can dissipate up to 4 W under specified conditions.