RSD050N06 is a N-channel MOSFET produced by ROHM. Its rated voltage is 60V, gate voltage is 20V, maximum current is 5.0A, and switching speed is fast. It is easy to drive and is used in switching power supplies.
The RSDO50N06 is a 4 V drive N‑channel MOSFET designed for low on‑resistance, fast switching, and easy parallel use. It is intended for switching applications in general‑use electronic equipment such as audio‑visual, office‑automation, communication devices, and consumer electronics.
The document lists the device’s absolute maximum ratings, thermal resistance, electrical characteristics, and packaging details, along with typical characteristic curves and measurement circuit diagrams. It also includes a notice about usage restrictions and export compliance.
| Drain‑source voltage (VDS) | 60 V |
|---|---|
| Gate‑source voltage (VGS) | ±20 V |
| Continuous drain current (ID) | 5.0 A |
| Power dissipation (PD) | 15 W |
| Thermal resistance (RθJC) | 8.33 °C/W |
The device can withstand up to 60 V between drain and source.
The MOSFET is rated for a continuous drain current of 5.0 A.
It can dissipate up to 15 W under the specified conditions.