RSD100N10 is a 4V drive N-channel MOSFET from ROHM. It features low on-resistance, 4V drive and high power package.
The RSD100N10 is a silicon N‑channel MOSFET with low on‑resistance, 4 V gate drive capability, and a high‑power package. It is intended for switching applications and includes built‑in ESD and body diodes.
Key specifications include a 100 V drain‑source rating, 20 V gate‑source rating, 10 A continuous drain current (20 A pulsed), 20 W power dissipation, and a thermal resistance of 6.25 °C·W. The device operates from –55 °C to +150 °C storage temperature and up to 150 °C junction temperature.
| Drain‑source voltage (VDS) | 100 V |
|---|---|
| Gate‑source voltage (VGS) | 20 V |
| Pulsed drain current (ID, pulse) | 20 A |
| Thermal resistance (junction‑to‑case) | 6.25 °C·W |
The device is rated for a maximum drain‑source voltage of 100 V.