This document is a datasheet from ROHM Co., Ltd. It describes the features and characteristics of the RRH090P03 Pch -30V -9A Power MOSFET. The product features low on-resistance, built-in G-S Protection Diode, and small surface mount package.
The RRHO90P03 is a low‑on‑resistance, -30 V, -9 A power MOSFET offered in a small SOP8 surface‑mount package. The datasheet lists its absolute maximum ratings, electrical parameters, and typical application curves.
Key specifications such as drain‑source voltage, current ratings, thermal resistance, and capacitances are detailed, and the document includes packaging dimensions and a notice on usage restrictions. For full design information, refer to the electrical characteristic tables and curves within the sheet.
| Drain‑Source voltage (Voss) | -30 V |
|---|---|
| Continuous drain current (Id) | +9 A |
| Pulsed drain current (Id,pulse) | +36 A |
| Power dissipation | 2.0 W |
| Junction temperature (Tj) | 150 °C |
| Thermal resistance, junction‑ambient (typ) | 62.5 °C/W |
The device is rated for a maximum drain‑source voltage of -30 V.
The continuous drain current rating is +9 A.
Typical junction‑to‑ambient thermal resistance is 62.5 °C/W.