RSD050N10 is a N-channel MOSFET produced by ROHM. Its features are low on-resistance, fast switching speed, simple drive circuits and easy parallel use.
The RSD050N10 is a 4 V drive N‑channel MOSFET featuring low on‑resistance, fast switching speed, and easy parallel use. It is intended for switching applications and can be incorporated into simple drive circuits.
The datasheet lists absolute maximum ratings, detailed electrical characteristics, characteristic curves, packaging details, and thermal resistance data. It also includes measurement circuit diagrams and a notice covering usage restrictions and safety considerations.
| Drain‑source voltage (VDS) | 100 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 5.0 A |
| Pulsed drain current (IDp) | 20 A |
| Power dissipation (PD) | 15 W |
| Input capacitance (Ciss) | 530 pF |
| Output capacitance (Coss) | 50 pF |
| Total gate charge (Qg) | 14 nC |
| Body diode forward voltage | 1.2 V |
The maximum drain‑source voltage is 100 V.
It is suited for switching applications.
The continuous drain current rating is 5.0 A.