This datasheet provides the specifications of RRL025P03 Pch -30V -2.5A Power MOSFET, including maximum power dissipation, maximum voltage, maximum current, maximum temperature, etc.
The RRLO25P03 is a low‑on‑resistance, surface‑mount power MOSFET designed for DC‑DC converters and other high‑current applications. It features a built‑in gate‑source protection diode, Pb‑free lead plating and RoHS compliance.
The datasheet provides absolute maximum ratings, thermal resistance values, detailed electrical characteristics, characteristic curves, and mechanical dimensions, along with safety and usage notes for reliable integration into electronic equipment.
| Drain‑Source voltage (VDS) | 30 V |
|---|---|
| Continuous drain current (ID) | 42.5 A |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Gate‑Source voltage (VGS) | +20 V |
The device is rated for a maximum drain‑source voltage of 30 V.
It can conduct up to 42.5 A continuously.