This document introduces the structure, dimensions, features, and applications of the 4V Drive Pch MOSFET RSD080P05 produced by ROHM. The product features low on-resistance, fast switching speed, simple drive circuits, and easy parallel use.
The RSDO80P05 is a 4 V drive P‑channel MOSFET from ROHM, offering low on‑resistance, fast switching speed, and easy parallel use. It is intended for general‑purpose electronic equipment such as audio‑visual, office‑automation, communication devices, and consumer electronics.
The datasheet lists absolute maximum ratings, thermal resistance, and detailed electrical characteristics, including typical on‑state resistance, gate charge, and body‑diode behavior, as well as measurement circuit diagrams for switching time and gate charge.
| Drain‑source voltage (VDS) | -45 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | +8.0 A |
| Power dissipation (PD) | 15 W |
| Channel temperature limit (TCH) | 150 °C |
| Thermal resistance (RθJC) | 8.33 °C/W |
| Typical on‑state resistance (RDS(on)) | 133 mΩ |
| Total gate charge (Qg) | 9.0 nC |
The maximum continuous drain current is +8.0 A.
The typical on‑state resistance is 133 mΩ at Id = -8.0 A and Vds = 4.5 V.
The device can dissipate up to 15 W under the specified conditions.
The thermal resistance (RθJC) is 8.33 °C/W.