This document introduces the features and characteristics of ROHM's RRH140P03 Pch -30V -14A Power MOSFET, including low on-resistance, built-in G-S protection diode, and small surface mount package.
The RRH140P03 is a low‑on‑resistance, -30 V, -14 A power MOSFET offered in a compact SOP8 surface‑mount package. It includes a built‑in gate‑source protection diode and meets RoHS requirements.
The datasheet lists absolute maximum ratings, detailed electrical characteristics, thermal resistance values, and mechanical dimensions, along with typical application circuits and packaging information for designers.
| Drain‑Source Voltage (Voss) | -30 V |
|---|---|
| Continuous Drain Current (Id) | -14 A |
| Pulsed Drain Current (Ip pulse) | +56 A |
| Gate‑Source Voltage (Vess) | +20 V |
| Avalanche Energy (Eas) | 3.16 mJ |
| Power Dissipation (Pp) | 2.0 W |
| Junction Temperature (Tj) | 150 °C |
| Thermal Resistance, Junction‑Ambient (Rja typ) | 62.5 °C/W |
| Input Capacitance (Ciss) | 8000 pF |
| Output Capacitance (Coss) | 1000 pF |
The device can handle a continuous drain current of -14 A.
It is supplied in a small surface‑mount SOP8 package.
The gate‑source voltage rating is up to +20 V.
The avalanche energy is rated at 3.16 mJ per pulse.