This document describes the features and characteristics of the 4V Drive Pch MOSFET RRR040P03 from ROHM Co., Ltd., including low on-resistance, space-saving small surface mount package, and 4V drive.
The RRR040P03 is a silicon P‑channel MOSFET offered in a compact TSMT3 surface‑mount package. It features a low on‑resistance, 4 V drive capability, and is suitable for switching applications.
The document provides absolute maximum ratings, detailed electrical characteristics, packaging information, and typical characteristic curves, along with measurement circuit examples for gate charge and switching time.
| Drain‑source voltage (Vdss) | -30 V |
|---|---|
| Gate‑source voltage (Vgss) | +20 V |
| Continuous drain current (Id) | +4 A |
| Pulsed drain current (Id,pulse) | +16 A |
| Source current (Is) continuous | -0.8 A |
| Power dissipation (Pd) | 1.0 W |
| Thermal resistance, channel‑to‑ambient (RθJA) | 125 °C/W |
| Gate threshold voltage (Vth) | -1.0 V to -2.5 V |
| On‑resistance (Rds(on)) typical | 45 mΩ |
The MOSFET can tolerate a drain‑source voltage of up to -30 V.
It is rated for a continuous drain current of +4 A.
The gate threshold voltage ranges from -1.0 V to -2.5 V.
Typical on‑resistance is about 45 mΩ.