This document describes the features and characteristics of the RSH065N06 4V Drive Nch MOSFET produced by ROHM, including low on-resistance, built-in G-S protection diode, and small surface mount package. This product is suitable for switching applications.
The RSHO65N06 is a 4 V‑drive N‑channel MOSFET offered in a compact SOP‑8 surface‑mount package. It features low on‑resistance and a built‑in gate‑source protection diode, making it suitable for switching applications.
The datasheet provides absolute maximum ratings, detailed electrical characteristics, typical transfer curves, and example measurement circuits. It also includes legal notices and usage guidelines from ROHM.
| Drain‑source voltage (VDS) | 60 V |
|---|---|
| Gate‑source voltage (VGS) | 20 V |
| Continuous drain current (ID) | 16.5 A |
| Pulsed drain current (IDp) | 26 A |
| Total power dissipation (PD) | 2.0 W |
| Thermal resistance, junction‑to‑ambient (RθJA) | 62.5 °C/W |
| Storage temperature range | -55 °C to +150 °C |
The device is rated for a maximum drain‑source voltage of 60 V.
Yes, it has a built‑in gate‑source protection diode.
The continuous drain current is specified as 16.5 A.
Typical on‑resistance values are given in the characteristic curves (e.g., 0.102 Ω at VGS = 4 V).