RSJ450N04 is a N-channel MOSFET produced by ROHM. It is mainly used for switching applications. The device has low on-resistance, high current and high power.
The RSJ450N04 is a silicon N‑channel MOSFET designed for high‑current, low‑on‑resistance switching applications. Key features include low on‑resistance, high continuous drain current, and a robust 10 V gate drive capability.
The document lists absolute maximum ratings, detailed electrical parameters, thermal resistance data, and typical application circuits. Packaging is supplied in tape‑and‑reel format (1000 pieces per unit), and the datasheet includes measurement circuit diagrams and legal notices regarding usage and radiation tolerance.
| Drain‑Source Voltage (VDS) | 40 V |
|---|---|
| Gate‑Source Voltage (VGS) | +20 V |
| Continuous Drain Current (ID) | 45 A |
| Pulsed Drain Current (ID,pulse) | 90 A |
| Power Dissipation (PD) | 50 W |
| Maximum Operating Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 °C to +150 °C |
| Packaging Unit | 1000 pieces per tape |
The continuous drain current is rated at 45 A.
The device can dissipate up to 50 W.
No, the product is not designed to be radiation tolerant.
The basic ordering unit is 1000 pieces per tape.