This datasheet is about ROHM RSR010N10 Nch 100V 1A Power MOSFET. It provides information about product features, internal circuit, packaging, application, absolute maximum ratings, electrical characteristics, thermal resistance.
The RSR010N10 is a 100 V, 1 A N‑channel power MOSFET offered in a compact TSMT3 surface‑mount package. It features low on‑resistance, a built‑in gate‑source protection diode, and complies with RoHS standards.
The datasheet provides absolute maximum ratings, detailed electrical characteristics, thermal resistance values, typical output curves, and mechanical dimensions, enabling designers to integrate the device into a wide range of electronic equipment such as audio‑visual, office‑automation, and communication devices.
| Drain‑Source voltage (VDS) | 100 V |
|---|---|
| Continuous drain current (ID) | 1 A |
| Pulsed drain current (ID(pulse)) | 4 A |
| Gate‑Source voltage (VGS) | 20 V |
| Power dissipation (PD) | 1 W |
| Junction temperature (Tj max) | 150 °C |
| Package | TSMT3 (surface‑mount) |
The device can handle a continuous drain current of 1 A.
The pulsed drain current rating is 4 A.
It is supplied in a TSMT3 surface‑mount package.
The maximum gate‑source voltage is 20 V.