RSJ650N10 is a 4V drive Nch MOSFET produced by ROHM, which has the characteristics of low voltage startup and high power.
The RSJ650N10 is a silicon N‑channel MOSFET offered in a high‑power LPTS package. It features a low on‑resistance, built‑in body diode, and ESD protection, making it suitable for switching applications up to 100 V.
The datasheet provides absolute maximum ratings, thermal resistance data, detailed electrical characteristics, and typical application circuits. It also includes measurement setups for switching time and gate charge, as well as a notice on usage and export restrictions.
| Drain‑source voltage (VDS) | 100 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 65 A |
| Pulsed drain current (ID,pulse) | 130 A |
| Power dissipation (PD) | 100 W |
| On‑state resistance (RDS(on)) typical | 9.1 mΩ |
| Input capacitance (CISS) | 10 780 pF |
| Output capacitance (COSS) | 785 pF |
| Total gate charge (Qg) | 260 nC |
| Thermal resistance (junction‑to‑case) | 1.25 °C·W |
The RSJ650N10 can withstand up to 100 V between drain and source.
Typical RDS(on) is 9.1 mΩ at ID = 32.5 A and VGS = 10 V.
It is rated for a continuous drain current of 65 A at 25 °C.
The junction‑to‑case thermal resistance is 1.25 °C·W.