RSR020N06 is a Nch 60V 2A Power MOSFET produced by ROHM. It has low on-resistance, built-in G-S Protection Diode, small package, etc.
The RSRO20N06 is a 60 V, 2 A N‑channel Power MOSFET offered in a compact TSMT3 surface‑mount package. It features low on‑resistance, a built‑in gate‑source protection diode, and complies with RoHS standards.
The document provides absolute maximum ratings, detailed electrical characteristics, thermal resistance data, packaging information, and mechanical dimensions for designers integrating the device into DC‑DC converters, audio‑visual equipment, and other electronic systems.
| Drain‑Source Voltage (VDS) | 60 V |
|---|---|
| Gate‑Source Voltage (VGS) | 20 V |
| Package | TSMT3 (Surface‑Mount) |
The device is rated for a maximum drain‑source voltage of 60 V.
Yes, it has a built‑in gate‑source protection diode.
The MOSFET is supplied in a TSMT3 surface‑mount package.