This document is a datasheet for the RSJ300N10 4V Drive Nch MOSFET produced by ROHM Co., Ltd. The product features low on-resistance and a built-in G-S protection diode, making it suitable for switching applications.
The RSJ300N10 is a silicon N‑channel MOSFET with a 4 V drive voltage, low on‑resistance and a built‑in gate‑source protection diode. The document lists its features, packaging details, and maximum ratings for safe operation.
Detailed electrical characteristics are given, including drain‑source voltage, gate‑source voltage, on‑state resistance, gate charge, and thermal resistance. Application circuits, measurement methods, and legal notices are also included.
| Drain‑source voltage (VDS) | 100 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Pulsed drain current (ID,pulse) | 60 A |
| Power dissipation (PD) | 50 W |
The maximum drain‑source voltage is 100 V.
The MOSFET can dissipate up to 50 W.