This is a Nch MOSFET with high switching speed, small package and low drive voltage.
The RSM002N06 is a 2.5 V drive N‑channel MOSFET offered in a small VMT3 package. It features high‑speed switching and low‑voltage drive capability, making it suitable for general‑purpose electronic equipment.
The datasheet lists absolute maximum ratings, thermal resistance, detailed electrical characteristics, characteristic curves, and recommended measurement circuits. It also includes packaging details and a notice on proper usage and safety considerations.
| Drain‑source voltage (VDS) max | 60 V |
|---|---|
| Gate‑source voltage (VGS) max | 420 V |
| Continuous drain current (ID) max | 250 mA |
| Pulsed drain current (ID) max | 1 A |
| Power dissipation (PD) max | 150 mW |
| Channel temperature max | 150 °C |
| Storage temperature range | -55 to +150 °C |
| Input capacitance (Ciss) | 15 pF |
| Output capacitance (Coss) | 45 pF |
| Reverse transfer capacitance (Crss) | 2.0 pF |
| Turn‑on delay time (tON) | 3.5 ns |
| Rise time (tRISE) | 5 ns |
| Turn‑off delay time (tOFF) | 18 ns |
| Fall time (tFALL) | 28 ns |
| Body diode forward voltage (VF) at 250 mA | 1.2 V |
The maximum drain‑source voltage is 60 V.
The basic ordering unit is 8 000 pieces.
The gate‑source voltage rating is up to 420 V.
The device can be stored from –55 °C to +150 °C.