RSH070N05 4V Drive Nch MOSFET datasheet provides information such as structure, dimensions, packaging, features, applications, maximum ratings and thermal resistance.
The RSH070N05 is a 4 V drive N‑channel MOSFET offered in a small SOP8 surface‑mount package. It features a built‑in gate‑source protection diode and is intended for power‑switching applications such as DC‑DC converters and inverters.
The datasheet lists key electrical parameters, including a maximum drain‑source voltage of 45 V, a continuous drain current of 7 A, and a total power dissipation of 2 W. Thermal resistance is 62.5 °C/W (junction‑to‑ambient) when mounted on a ceramic board. Typical gate charge is 12 nC, and the device operates over a storage temperature range of –55 °C to +150 °C.
| Drain‑source voltage (VDS) max | 45 V |
|---|---|
| Gate‑source voltage (VGS) max | 20 V |
| Continuous drain current (ID) max | 7 A |
| Total power dissipation (PD) max | 2 W |
| Storage temperature range | -55 °C to +150 °C |
| Thermal resistance (RθJA) | 62.5 °C/W |
| Typical total gate charge (Qg) | 12.0 nC |
| Package | SOP8 |
The device can tolerate up to 45 V between drain and source.
Yes, it has a built‑in gate‑source protection diode.
Typical total gate charge is 12.0 nC at VGS = 25 V.
The MOSFET is supplied in an SOP8 surface‑mount package.