RSR025N03 is a N-channel MOS FET with low on-resistance and built-in G-S protection diode. It has a small surface mount package and is suitable for power switching and DC/DC converters.
The RSR025N03 is a low‑on‑resistance N‑channel MOSFET with a built‑in gate‑source protection diode and a compact TSMT3 surface‑mount package. It is intended for power‑switching and DC‑DC converter applications.
The datasheet lists absolute maximum ratings, detailed electrical characteristics, typical performance curves, and packaging specifications. An appendix notes usage restrictions for safety‑critical equipment and export‑control information.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | 20 V |
| Body diode forward voltage (VSD) | 1.2 V (typ) |
| Thermal resistance (RθJA) | 125 °C/W |
The device is rated for a maximum drain‑source voltage of 30 V.
Yes, a built‑in gate‑source protection diode is included to protect against static electricity.