This document describes the features and characteristics of ROHM RSJ550N10 4V Drive Nch MOSFET, including low on-resistance, high power package, and 4V drive.
The RSJ550N10 is a 4 V drive N‑channel MOSFET with low on‑resistance and a high‑power package, intended for switching applications. Key features include a 100 V drain‑source rating, +20 V gate‑source rating, and a continuous drain current of 155 A.
The device is supplied in a tape‑and‑reel package (25 mm × 27 mm × 0.8 mm) with a thermal resistance of 1.25 °C/W. Electrical specifications, characteristic curves, and measurement circuit diagrams are provided, along with a notice covering usage, export, and liability information.
| Drain‑source voltage (VDS) | 100 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 155 A |
| Power dissipation (PD) | 100 W |
| Thermal resistance, channel‑to‑case (Rth ch‑c) | 1.25 °C/W |
| Storage temperature range | -55 °C to +150 °C |
The device can withstand up to 100 V drain‑source voltage.
The RSJ550N10 is rated for a continuous drain current of 155 A.
The channel‑to‑case thermal resistance is 1.25 °C/W.
It can be stored from –55 °C up to +150 °C.