RSQ015P10 is a P-channel MOSFET produced by ROHM. Its features are low voltage drive (4V) and small surface mount package (TSMT6).
The RSQ015P10 is a 4 V drive P‑channel MOSFET offered by ROHM in a compact surface‑mount TSMT6 package. The document provides detailed electrical specifications, absolute maximum ratings, thermal resistance data, and typical characteristic curves for design reference.
Additional sections cover packaging specifications, measurement circuit diagrams, and legal notices regarding the use of the product in various applications.
| Drain‑source voltage (VDS) | -100 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 41.5 A |
| Package type | TSMT6 surface‑mount |
The device can handle a continuous drain current of 41.5 A.
It is supplied in a small surface‑mount TSMT6 package.
The MOSFET is rated for a drain‑source voltage of –100 V.