The RSM002P03 is a low-on-resistance P-channel MOSFET from RS. It uses the VMT3 package and operates at 4V with a maximum current of 4A.
The RSM002P03 is a P‑channel MOSFET designed for low on‑resistance and a small VMT3 package. It operates with a 4 V gate drive and is suited for switching applications.
Key specifications include a drain‑source voltage of –30 V, gate‑source rating of +20 V, continuous drain current of 0.2 A, pulsed drain current of 0.4 A, and a maximum power dissipation of 0.15 W. The device is supplied in a tape‑and‑reel format with a basic ordering unit of 8 000 pieces.
| Drain‑source voltage (Voss) | -30 V |
|---|---|
| Gate‑source voltage (Vess) | +20 V |
| Continuous drain current (Ib) | 0.2 A |
| Pulsed drain current (Ib(pulse)) | 0.4 A |
| Total power dissipation (Pd) | 0.15 W |
| Maximum channel temperature | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Package type | VMT3 (tape & reel) |
| Basic ordering unit | 8 000 pieces |
The device is rated for a drain‑source voltage of –30 V.
It can handle a gate‑source voltage up to +20 V.
The basic ordering unit consists of 8 000 pieces.
The MOSFET is a 4 V‑drive P‑channel device.