RSQ020N03 is N-channel MOSFET with low on-resistance, suitable for switching applications, packaged in TSMT6
The RSQ020N03 is a 4 V‑drive N‑channel MOSFET offered in a compact TSMT6 surface‑mount package. It is intended for switching applications and features low on‑resistance and built‑in body‑diode protection.
The datasheet lists absolute maximum ratings such as 30 V drain‑source voltage and 20 V gate‑source voltage, continuous drain current of 42 A, and a typical on‑state resistance of 0.148 mΩ. Thermal resistance, gate charge, and detailed electrical characteristic curves are also provided for circuit design.
| Drain‑source voltage (Vds) | 30 V |
|---|---|
| Gate‑source voltage (Vgs) | 20 V |
| Continuous drain current (Id) | 42.0 A |
| Pulsed drain current (Id,pulse) | 8.0 A |
| Continuous source current (Is) | 1.0 A |
| Total power dissipation (P) | 1.25 W |
| Thermal resistance (RθJA) | 100 °C/W |
The device is rated for a maximum drain‑source voltage of 30 V.
It can conduct a continuous drain current of 42.0 A.