This document is a datasheet for the ROHM RU1C002ZP 1.2V Drive Pch MOSFET. The product features low on-resistance and low voltage drive, making it suitable for switching applications.
The RU1C002ZP is a silicon P‑channel MOSFET designed for low on‑resistance and low‑voltage drive operation (1.2 V). It is intended for switching applications and is supplied in a TCL package with a basic ordering unit of 3000 pieces.
The datasheet lists absolute maximum ratings, thermal resistance, and detailed electrical characteristics such as drain‑source voltage, gate‑source voltage, current limits, capacitances, and switching times. Measurement circuits and application notes are also included, along with legal notices and usage guidelines.
| Drain‑source voltage (VDS) | -20 V |
|---|---|
| Gate‑source voltage (VGS) | +10 V |
| Continuous drain current (ID) | +200 mA |
| Pulsed drain current (ID(p)) | +800 mA |
| Power dissipation (PD) | 150 mW |
| Thermal resistance (RθJA) | 833 °C/W |
| Input capacitance (Ciss) | 115 pF |
| Output capacitance (Coss) | 10 pF |
| Reverse transfer capacitance (Crss) | 6 pF |
| Turn‑on delay time (t_on) | 6 ns |
| Turn‑off delay time (t_off) | 17 ns |
The maximum drain‑source voltage is –20 V.
It is designed for low‑voltage drive, typically 1.2 V.
It is supplied in a TCL package with a basic ordering unit of 3000 pieces.
Yes, the notice recommends designing an ESD protection circuit.