This document describes the features and dimensions of the 4V Drive Pch MOSFET RSC002P03 produced by ROHM. The product has low on-resistance and low-voltage drive characteristics, making it suitable for switching applications.
The RSC002P03 is a low‑voltage (4 V) P‑channel MOSFET with low on‑resistance, designed for switching applications. Its key features include ESD protection, a body diode, and a compact SOT‑23 package.
The document lists absolute maximum ratings, thermal resistance, and detailed electrical parameters such as drain‑source voltage, gate‑source voltage, and capacitances. It also includes characteristic curves, measurement circuit examples, and legal notices regarding use and distribution.
| Drain‑source voltage (Vds) | -30 V |
|---|---|
| Gate‑source voltage (Vgs) | +20 V |
| Continuous drain current (Id) | 410.25 A |
| Pulsed drain current (Id,pulse) | 40.5 A |
| Power dissipation (Pd) | 0.2 W |
| Channel temperature (Tch) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Thermal resistance (RθJA) | 625 °C/W |
| Gate‑source leakage current | <10 µA |
| Input capacitance (Ciss) | 30 pF |
| Output capacitance (Coss) | 10 pF |
| Reverse transfer capacitance (Crss) | 5 pF |
| Body diode forward voltage | 1.2 V |
| Package type | SOT‑23, tape & reel |
| Basic ordering unit | 3000 pieces |
The device is rated for a drain‑source voltage of –30 V.
It is supplied in an SOT‑23 package, tape‑and‑reel format with 8 units per tape.
The storage temperature range is –55 °C to +150 °C.