This document introduces the structure, dimensions, features, and applications of ROHM's 0.9V drive N-channel MOSFET RYE002N05. The product features high-speed switching, small package size (EMT3), and ultra-low voltage drive.
The RYE002N05 is a 0.9 V drive N‑channel MOSFET offered by ROHM in an EMT3 (SOP416) surface‑mount package. It is intended for switching applications and includes a built‑in body diode.
The sheet lists key parameters such as a 50 V drain‑source rating, +8 V gate‑source rating, 200 mA continuous drain current, 800 mA pulsed drain current, 150 mW power dissipation, and a thermal resistance of 833 °C/W. Electrical characteristics, characteristic curves, and measurement circuit diagrams are provided for design reference.
| Drain‑source voltage (VDS) | 50 V |
|---|---|
| Gate‑source voltage (VGS) | +8 V |
| Continuous drain current (ID) | 200 mA |
| Pulsed drain current (ID,pulse) | 800 mA |
| Power dissipation (PD) | 150 mW |
| Maximum channel temperature (TCH) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Thermal resistance (RθJA) | 833 °C/W |
| Input capacitance (Ciss) | 26 pF |
| Output capacitance (Coss) | 6 pF |
| Gate threshold voltage (VGS(th)) | 0.3 V – 0.8 V |
| On‑state resistance (RDS(on)) | 2.0 Ω (typ) |
The device can withstand up to 50 V between drain and source.
The gate‑source voltage rating is +8 V.
The gate threshold voltage ranges from 0.3 V to 0.8 V.