1.5V Drive Pch MOSFET RZF020P01 is a P-channel MOSFET device produced by ROHM. It features low on-resistance, built-in G-S protection diode, small package and low drive voltage.
The RZF020P01 is a 1.5 V drive P‑channel MOSFET offered in a small surface‑mount TUMT3 package. It features low on‑resistance, a built‑in gate‑source protection diode, and low‑voltage drive capability.
The datasheet lists absolute maximum ratings, typical electrical parameters such as drain‑source voltage, current limits, power dissipation, and thermal resistance, as well as application circuits and measurement setups. It also includes packaging details and legal notices.
| Drain‑source voltage (VDS) | -12 V |
|---|---|
| Gate‑source voltage (VGS) | +10 V |
| Continuous drain current (ID) | +2 A |
| Continuous source current (IS) | 0.6 A |
| Maximum junction temperature (TJ) | 150 °C |
| Input capacitance (CISS) | 770 pF |
| Output capacitance (COSS) | 75 pF |
| Reverse transfer capacitance (CRSS) | 60 pF |
| Package type | TUMT3 surface‑mount |
The device can tolerate a drain‑source voltage of up to –12 V.
It is designed for low‑voltage drive, typically 1.5 V.
The MOSFET is supplied in a small surface‑mount TUMT3 package.