RZF013P01 is a low voltage drive Pch MOSFET produced by ROHM. It has the characteristics of low on-resistance, high power package and low voltage drive (1.5V).
The RZF013P01 is a silicon P‑channel MOSFET designed for low‑on‑resistance, high‑power packaging, and low‑voltage (1.5 V) drive operation. It is intended for switching applications and is supplied by ROHM Semiconductor.
The datasheet lists key electrical parameters such as drain‑source voltage, gate‑source voltage, current ratings, power dissipation, and thermal resistance, as well as typical characteristic curves, measurement circuits, and packaging information.
| Drain‑source voltage (Voss) | –12 V |
|---|---|
| Gate‑source voltage (Vass) | +10 V |
| Continuous drain current (Ib) | +13 A |
| Pulsed drain current | 45.2 A |
| Total power dissipation (Pp) | 0.8 W |
| Thermal resistance (channel‑to‑ambient) | 156 °C/W |
| Input capacitance (Ciss) | 290 pF |
| Output capacitance (Coss) | 28 pF |
| Total gate charge (Qg) | 24 nC |
The device is rated for a drain‑source voltage of –12 V.
It is a low‑voltage drive MOSFET that operates with a 1.5 V drive.
The continuous drain current rating is +13 A.
The channel‑to‑ambient thermal resistance is 156 °C/W.