This document describes the features and characteristics of a 1.5V drive Pch MOSFET product, including low on-resistance, high power package, and low voltage drive. The product is suitable for switching applications.
The RZRO40P01 is a silicon P‑channel MOSFET designed for low‑on‑resistance, high‑power packaging, and 1.5 V drive operation. The datasheet provides detailed electrical characteristics, absolute maximum ratings, and packaging information.
Key sections include features, applications, packaging specifications, electrical characteristics, thermal resistance, and safety notices. All specifications are presented with typical values and limits for design reference.
| Drain‑source voltage (VDS) | -12 V |
|---|---|
| Gate‑source voltage (VGS) | +10 V |
| Continuous drain current (ID) | 4 A |
| Pulsed drain current (ID,pulse) | 16 A |
| Continuous source current (IS) | 0.8 A |
| Total power dissipation (PD) | 1.0 W |
| Maximum junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Typical on‑resistance (RON) | 30 mΩ |
| Thermal resistance (RθJA) | 125 °C/W |
The device can withstand a drain‑source voltage of up to -12 V.
It is rated for a continuous drain current of 4 A.
Typical on‑resistance is about 30 mΩ.
The junction temperature limit is 150 °C and the storage range is –55 °C to +150 °C.