RYU002N05 is a 0.9V drive N-channel MOSFET with high speed switing, small package(UMT3) and ultra low voltage drive(0.9V drive)
The RYU002N05 is a silicon N‑channel MOSFET designed for high‑speed switching in a compact SOD (UMTS) package. It features ultra‑low 0.9 V gate drive, a maximum drain‑source voltage of 50 V, and continuous drain current of 200 mA.
Typical applications include audio‑visual equipment, office‑automation devices, communication gear, and other general‑purpose electronic products. The datasheet provides absolute maximum ratings, detailed electrical characteristics, thermal resistance data, and measurement circuit diagrams for design reference.
| Drain‑source voltage (VDS) | 50 V |
|---|---|
| Gate‑source voltage (VGS) | +8 V |
| Continuous drain current (ID) | 200 mA |
| Pulsed drain current (ID,pulse) | 800 mA |
| Power dissipation (PD) | 200 mW |
| Thermal resistance, channel‑to‑ambient (RθJA) | 625 °C/W |
The device can withstand up to 50 V between drain and source.
It is rated for a continuous drain current of 200 mA.