This document describes the structure, dimensions, and features of the 1.2V drive Pch MOSFET RZE002P02 from ROHM, including high-speed switching, small package, and 1.2V drive. The product is suitable for switching applications.
The ROHM RZE002P02 is a 1.2 V drive P‑channel MOSFET offered in a small EMT3 package. The data sheet provides detailed electrical characteristics, absolute maximum ratings, thermal resistance, and typical application circuits.
Key sections include features, package specifications, absolute maximum ratings, thermal resistance, electrical characteristics, characteristic curves, measurement circuits, and legal notices. The document also outlines recommended usage, safety considerations, and contact information for further technical support.
| Drain‑source voltage (Voss) | -20 V |
|---|---|
| Gate‑source voltage (Vass) | +10 V |
| Continuous drain current (Id) | 200 mA |
| Pulsed drain current (Id,pulse) | 800 mA |
| Total power dissipation (Pp) | 150 mW |
| Maximum junction temperature | 150 °C |
| Thermal resistance (Rth ch‑a) | 833 °C/W |
| Input capacitance (Ciss) | 115 pF |
| Output capacitance (Coss) | 10 pF |
| Reverse transfer capacitance (Crs) | 6 pF |
| Turn‑on delay time (t_on) | 6 ns |
| Rise time (t_r) | 4 ns |
| Turn‑off delay time (t_off) | 17 ns |
| Total gate charge (Qg) | 1.4 nC |
The device can tolerate a drain‑source voltage of up to –20 V.
The gate‑threshold voltage is typically between –0.3 V and –1.0 V.
The storage temperature range is –55 °C to +150 °C.