RZR025P01 is a 1.5V drive P-channel MOSFET with low on-resistance, built-in G-S protection diode, small surface mount package and low voltage drive.
The RZR025P01 is a silicon P‑channel MOSFET designed for low‑voltage (1.5 V) switching applications. It features low on‑resistance, an integrated gate‑source protection diode, and is offered in a small TSMT3 surface‑mount package.
Key specifications include a maximum drain‑source voltage of –12 V, drain current up to ±2.5 A, power dissipation of 1.0 W, and a thermal resistance of 125 °C/W when mounted on a ceramic board. The device operates from –55 °C to +150 °C storage temperature and up to 150 °C junction temperature.
| Drain‑source voltage (V_DS) | -12 V |
|---|---|
| Gate‑source voltage (V_GS) | ±10 V |
| Junction temperature (T_ch) | 150 °C |
| Storage temperature (T_stg) | -55 to +150 °C |
| Thermal resistance (RθJA) | 125 °C/W |
The device is rated for a maximum drain‑source voltage of –12 V.
It is supplied in a small surface‑mount TSMT3 package.