This is a datasheet for ROHM's 1.2V drive Pch MOSFET RZM002P02.
The ROHM RZM002P02 is a 1.2 V drive P‑channel MOSFET offered in a compact VMT3 package. It features high‑speed switching, ultra‑low voltage drive, and built‑in ESD and body diodes.
The datasheet provides detailed electrical characteristics, absolute maximum ratings, thermal resistance, and typical application circuits, along with measurement setups for switching time and gate charge.
| Drain‑source voltage (Vdss) | -20 V |
|---|---|
| Gate‑source voltage (Vgss) | +10 V |
| Continuous drain current (Id) | +200 mA |
| Pulsed drain current (Id,pulse) | 800 mA |
| Total power dissipation (Pd) | 150 mW |
| Thermal resistance (RθJA) | 833 °C/W |
| Storage temperature range | -55 °C to +150 °C |
| Package type | VMT3 |
The datasheet lists a continuous drain current of +200 mA.
The device can tolerate a gate‑source voltage up to +10 V.
It is supplied in a VMT3 surface‑mount package.
The MOSFET can be stored from –55 °C to +150 °C.