This datasheet provides detailed information on 1.5V Drive Pch MOSFET RZR020P01, including structure, features, dimensions, applications, packaging specifications, absolute maximum ratings, thermal resistance and electrical characteristics.
The RZRO20P01 is a silicon P‑channel MOSFET offered by ROHM in a small surface‑mount package (TSMT3). It features low on‑resistance and a built‑in gate‑source protection diode, making it suitable for a variety of inner‑circuit switching applications.
The datasheet lists the device's absolute maximum ratings, thermal resistance, and detailed electrical characteristics such as drain‑source voltage, gate‑source voltage, and current limits. Packaging information, ordering quantities, and measurement circuit diagrams are also included, along with legal notices and usage guidelines.
| Drain‑source voltage (Voss) | -12 V |
|---|---|
| Gate‑source voltage (Vgss) | +10 V |
| Continuous drain current (Id) | 2 A |
| Pulsed drain current (Idp) | 6 A |
| Total power dissipation (P_D) | 1.0 W |
| Channel temperature rating | 150 °C |
| Storage temperature range | -55 to +150 °C |
| Thermal resistance (Rth ch‑a) | 125 °C/W |
| Basic ordering unit | 3000 pieces |
The device can withstand a drain‑source voltage of up to -12 V.
Yes, it has a built‑in gate‑source protection diode.
The basic ordering unit is 3000 pieces.
The continuous drain current rating is 2 A.