This document describes the features and characteristics of ROHM's 1.5V Drive Pch MOSFET RZQ050P01, including low on-resistance, high power package, and low voltage drive.
The RZQ050P01 is a 1.5 V drive P‑channel MOSFET offered by ROHM. The datasheet provides the device structure, dimensions, key features such as low on‑resistance and high‑power package, and typical application areas like switching circuits.
Detailed sections cover absolute maximum ratings, thermal resistance, electrical characteristics (drain‑source voltage, gate‑source leakage, on‑state resistance, capacitances, switching times), body‑diode behavior, characteristic curves, and measurement circuit examples. The appendix contains contact information and usage notices. This manual is written in Chinese.
| Input capacitance (Ciss) | 2850 pF |
|---|---|
| Turn‑on delay time (td(on)) | 100 ns |
The device can handle up to -5 A drain current at VGS = ‑4.5 V.