This document describes the features and characteristics of the 4V drive Nch MOSFET RSD080N06 produced by ROHM, including low on-resistance, 4V drive, and high power package. This product is suitable for switching applications.
The RSDO80N06 is a 4 V‑drive N‑channel MOSFET offered by ROHM. The datasheet provides absolute maximum ratings, electrical characteristics, thermal data and typical application circuits for the device.
Key sections cover features, packaging, maximum ratings, thermal resistance, detailed electrical parameters, body‑diode specs, characteristic curves and measurement setups. The document ends with legal notices and contact information.
| Drain‑source voltage (VDS) | 60 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 8 A |
| Pulsed drain current (IDP) | 16 A |
| Power dissipation (PD) | 15 W |
| Channel temperature limit (TCH) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Thermal resistance (RθJC) | 8.33 °C/W |
| Total gate charge (Qg) | 9.4 nC |
| Input capacitance (Ciss) | 380 pF |
The device is rated for a maximum drain‑source voltage of 60 V.
The MOSFET can be stored from –55 °C up to +150 °C.
The forward voltage is approximately 1.5 V when 8 A flows through the diode.