RYM002N05 is a N-channel MOSFET from ROHM company. It features high switching speed, small package and 0.9V low drive voltage, suitable for switching applications.
The RYM002N05 is a 0.9 V drive N‑channel MOSFET offered in a compact VMT3 package. It features high‑speed switching, low voltage drive and a small footprint suitable for space‑constrained designs.\n\nThe datasheet lists absolute maximum ratings, thermal resistance, and detailed electrical characteristics, and includes typical output and transfer curves. Application notes advise using ESD protection and note that the device is not radiation‑tolerant.
| Drain‑source voltage (VDS) | 50 V |
|---|---|
| Gate‑source voltage (VGS) | +8 V |
| Continuous drain current (ID) | 200 mA |
| Pulsed drain current (ID,pulse) | 800 mA |
| Power dissipation (PD) | 150 mW |
| Channel temperature (TCH) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Thermal resistance (RθJA) | 833 °C/W |
The device can withstand up to 50 V between drain and source.
The gate‑source voltage rating is +8 V.
It can conduct a continuous drain current of 200 mA.
The MOSFET is supplied in a small VMT3 package.