SH8M12 is a Nch+Pch MOSFET produced by ROHM. It features low on-resistance, high power package and low voltage drive.
The ROHM SH8M12 is a dual N‑channel and P‑channel MOSFET designed for low‑voltage (4 V) drive applications and supplied in an SOP8 package. It offers low on‑resistance, high‑current capability, and a compact 4 V drive requirement.
The datasheet lists absolute maximum ratings such as 30 V drain‑source voltage, ±20 V gate‑source voltage, and up to 45 A continuous drain current for the P‑channel device, along with detailed electrical characteristics, characteristic curves, and recommended measurement circuits for accurate testing.
| Drain‑source voltage (Vds) | 30 V |
|---|---|
| Gate‑source voltage (Vgs) | ±20 V |
| Continuous drain current (Id) N‑channel | 5 A |
| Continuous drain current (Id) P‑channel | 45 A |
| Power dissipation (Pd) | 20 W |
| Maximum junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Package type | SOP8 |
| Drive voltage | 4 V |
The SH8M12 can tolerate up to 30 V between drain and source.
It is supplied in an SOP8 surface‑mount package.
The device is designed for a 4 V drive voltage.