This data sheet is for the characteristics of R6004CND, including electrical characteristics, absolute maximum ratings and packaging specifications.
The R6004CND is a 10 V drive N‑channel MOSFET offered by ROHM Semiconductor. The datasheet outlines its structure, key features such as low on‑resistance and high‑speed switching, and typical application areas like switching circuits.
Key electrical parameters are listed, including a 600 V drain‑source rating, 4 A continuous drain current, 40 W power dissipation, and thermal resistance of 3.13 °C/W. The document also provides characteristic curves, measurement circuit diagrams, and packaging details for designers.
| Drain‑source voltage (VDS) | 600 V |
|---|---|
| Gate‑source voltage (VGS) | +25 V |
The device can withstand up to 600 V drain‑source voltage.