SH8K15 is a Nch+Nch MOSFET produced by ROHM company. The device has low on-resistance, built-in G-S protection diode, small surface mount package (SOP8) and other features, suitable for switching applications.
The SH8K15 is a silicon N‑channel MOSFET designed for low on‑resistance applications. Key features include low on‑resistance, a built‑in gate‑source protection diode, and a compact SOP8 surface‑mount package.
The document lists absolute maximum ratings, detailed electrical characteristics, body‑diode data, and typical performance curves. It also includes measurement circuit diagrams and legal notices for proper use of the component.
| Drain‑source voltage (V_DSS) | 30 V |
|---|---|
| Gate‑source voltage (V_GS) | +20 V |
| Continuous drain current (I_D) | 9.0 A |
| Pulsed drain current (I_Dp) | 86 A |
| Source current (continuous) | 1.6 A |
| Power dissipation (P_D) | 2.0 W |
| Channel temperature (T_ch) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Package type | SOP8 surface‑mount |
| Built‑in protection | Gate‑source protection diode |
The SH8K15 can withstand up to 30 V between drain and source.
The device is rated for a continuous drain current of 9.0 A.
Yes, it features a built‑in gate‑source protection diode.
It is supplied in a small surface‑mount SOP8 package.