This document is a datasheet for the 4V Drive Nch + Nch MOSFET SH8K13 produced by ROHM Co., Ltd. The product features low on-resistance, built-in G-S protection diode, and small surface mount package. It is primarily used for switching applications.
This datasheet describes the ROHM SH8K13 N‑channel MOSFET, including its structure, dimensions, and key features such as low on‑resistance and an integrated ESD protection diode. It lists packaging details, absolute maximum ratings, and detailed electrical characteristics for both continuous and pulsed operation.
Additional sections cover characteristic curves, measurement circuit diagrams, and legal notices. The document is intended for designers integrating the SH8K13 into electronic equipment such as audio‑visual, office, and communication devices.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 46 A |
| Power dissipation (PD) | 2.0 W |
| Maximum channel temperature (TCH) | 150 °C |
The maximum drain‑source voltage is 30 V.
It can handle a continuous drain current of 46 A.
Yes, it has a built‑in ESD protection diode.
The device is supplied in a small surface‑mount SOP‑8 package.