SH8M11 is a low voltage driven Nch+Pch MOSFET, with low on-resistance, high power package and low voltage drive, suitable for switching applications.
The SH8M11 is a dual N‑channel and P‑channel MOSFET designed for low‑voltage (4 V) drive applications. It features a high‑power SOP8 package, low on‑resistance, and a maximum drain‑source voltage of 30 V.
Key specifications include a continuous drain current of 43.5 A, power dissipation of 20 W, and a channel temperature rating of 150 °C. The datasheet also provides typical electrical characteristic curves, measurement circuit diagrams, and safety notices for designers.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | ±20 V |
| Continuous drain current (ID) | 43.5 A |
| Power dissipation (PD) | 20 W |
| Channel temperature (TCH) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| On‑state resistance (RDS(on)) typical | 90 mΩ (N‑channel), 100 mΩ (P‑channel) |
| Package | SOP8 high‑power package |
The SH8M11 can withstand up to 30 V drain‑source voltage.
It is rated for a continuous drain current of 43.5 A.
The device is offered in a high‑power SOP8 package.